Alfa Chemistry Materials 7 - Products
Alfa Chemistry Materials is specialized in material chemistry and offers an extensive catalog of materials in a wide range of applications, including Metals and Materials, 3D Printing Materials, Biomaterials.
| Product | Description | |
|---|---|---|
| Functionalized SWCNT-Single Walled Carbon Nanotubes | Functionalized SWCNT-Single Walled Carbon Nanotubes. Purity: >98% (SWNT). |  |
| Fungi X9 Copper Nanoparticles Dispersion | Fungi X9 Copper Nanoparticles Dispersion. CAS No. 7440-50-8. Purity: 99.9%. | |
| Fused Magnesium Oxide (MgO) Powder | Fused Magnesium Oxide (MgO) Powder. Alternative Names: Fused Magnesium Oxide; Fused Magnesia; Electrofused Magnesium Oxide; Electro Fused Magnesium Oxide; Fused Magnesium Oxide; magnesium oxide; magnesium(II) oxide; magnesia; periclase. Purity: 99.5%. | |
| Gadolinium Fluoride (GdF3) Sputtering Targets | Gadolinium Fluoride (GdF3) Sputtering Targets. Alternative Names: Gadolinium Fluoride (GdF3) Sputtering Targets, GdF3 Sputtering Target, GdF3 Sputter Target, GdF3 Target, Gadolinium Fluoride Sputtering Target, Gadolinium Fluoride Sputter Target, Gadolinium Fluoride Target. Purity: 99.9%. | |
| Gadolinium (Gd) Evaporation Material | Gadolinium (Gd) Evaporation Material. Alternative Names: Gd Pellets, Gd Pieces, Gadolinium Pellets, Gadolinium Pieces, Gadolinium Evaporation Material, Gd Evaporation Material, Gd Evapor Materials, Gadolinium Evapor Materials. Purity: 99.99%. | |
| Gadolinium Nanoparticle Dispersion | Gadolinium Nanoparticle Dispersion. Mole weight: 157.25. SMILES: [Gd]. InChI: InChI=1S/Gd. | |
| Gadolinium Nitride (GdN) Sputtering Targets | Gadolinium Nitride (GdN) Sputtering Targets. Alternative Names: Gadolinium Nitride (GdN) Sputtering Targets, GdN Sputtering Targets, GdN Targets, GdN Sputter Targets. Purity: 99.5%-99.9%. | |
| Gadolinium Oxide Nanoparticle Dispersion | Gadolinium Oxide Nanoparticle Dispersion. Mole weight: 362.5. IUPAC Name: Gadolinium(+3) cation; oxygen(-2) anion. SMILES: [Gd+3].[Gd+3].[O-2].[O-2].[O-2]. InChI: InChI=1S/2Gd.3O/q2*+3;3*-2. | |
| Gadolinium oxide nanoparticles | Gadolinium oxide nanoparticles. | |
| Gadolinium Telluride (Gd2Te3) | Gadolinium Telluride (Gd2Te3). Alternative Names: Gadolinium Telluride Powder, Gd2Te3 Powder, Gadolinium Telluride, Gd2Te3, 12160-99-5. Purity: 99.9%, 99.99%. | |
| Gadolinium Zirconate (Gd2Zr2O3) Sputtering Targets | Gadolinium Zirconate (Gd2Zr2O3) Sputtering Targets. Alternative Names: Gadolinium Zirconate (Gd2Zr2O3) Sputtering Targets, Gd2Zr2O3 Sputtering Target, Gd2Zr2O3 Sputter Target, Gd2Zr2O3 Target, Gadolinium Zirconate Sputtering Target, Gadolinium Zirconate Sputter Target, Gadolinium Zirconate Target. Purity: 99.9%. | |
| Gallium Antimonide (GaSb) | Gallium Antimonide (GaSb). Alternative Names: Gallium Antimonide Powder, GaSb Powder, gallium(III) antimonide; gallium antimonide. Purity: 99.999%. | |
| Gallium Antimonide (GaSb) Crystal | Gallium Antimonide (GaSb) Crystal. Alternative Names: Gallium Antimonide Crystal, GaSb Crystal, GaSb Wafers, GaSb Substrate, GaSb Slice. | |
| Gallium Antimonide (GaSb) Sputtering Targets | Gallium Antimonide (GaSb) Sputtering Targets. Alternative Names: Gallium Antimonide (GaSb) Sputtering Targets, GaSb Sputtering Target, GaSb Sputter Target, GaSb Target, Gallium Antimonide Sputtering Target, Gallium Antimonide Sputter Target, Gallium Antimonide Target. Purity: 99.999%. | |
| Gallium Antimonide nanoparticles | Gallium Antimonide nanoparticles. | |
| Gallium Arsenide (GaAs) Sputtering Targets | Gallium Arsenide (GaAs) Sputtering Targets. Alternative Names: Gallium Arsenide (GaAs) Sputtering Targets, GaAs Sputtering Targets, GaAs Targets, GaAs Sputter Targets. Purity: 99.999%. | |
| Gallium Arsenide Powder | Gallium Arsenide Powder. CAS No. 106097-59-0. Molecular formula: GaAs. Purity: >99.99%. | |
| Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion | Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion. Mole weight: 268.853. IUPAC Name: oxo(oxogallanyloxy)gallane; oxozinc. SMILES: O=[Zn].O=[Ga]O[Ga]=O. InChI: InChI=1S/2Ga.4O.Zn. | |
| Gallium-Doped Zinc Oxide (GZO) Nanoparticles / Nanopowder | Gallium-Doped Zinc Oxide (GZO) Nanoparticles / Nanopowder. Mole weight: 268.853. IUPAC Name: oxo(oxogallanyloxy)gallane; oxozinc. SMILES: O=[Zn].O=[Ga]O[Ga]=O. InChI: InChI=1S/2Ga.4O.Zn. | |
| Gallium (Ga) | Gallium (Ga). Alternative Names: High Purity Gallium (Ga); 99.99% Gallium (Ga); 99.999% Gallium (Ga); 99.9999% Gallium (Ga). Purity: 4N-6N. | |
| Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) Crystal | Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) Crystal. Alternative Names: Gallium Gadolinium Garnet Crystal, GGG Crystal, Gd3Ga5O12 Crystal, GGG Wafers, Gd3Ga5O12 Wafers, GGG Substrate, Gd3Ga5O12 Substrate, GGG Slice, Gd3Ga5O12 Slice. | |
| Gallium(III) Chloride Anhydrous (GaCl3) | Gallium(III) Chloride Anhydrous (GaCl3). Alternative Names: Gallium(III) Chloride Powder, GaCl3 Powder, Gallium(III) Chloride Anhydrous; GaCl3. CAS No. 7440-5-3. Purity: 99.99%-99.999%. | |
| Gallium(III) Fluoride Anhydrous (GaF3) | Gallium(III) Fluoride Anhydrous (GaF3). Alternative Names: Gallium(III) Fluoride Powder, GaF3 Powder, Gallium(III) Fluoride Anhydrous; GaF3. Purity: 99.99%-99.999%. | |
| Gallium(III) Iodide Anhydrous (GaI3) | Gallium(III) Iodide Anhydrous (GaI3). Alternative Names: Gallium(III) Iodide Powder, GaI3 Powder, Gallium(III) Iodide Anhydrous; GaI3. Purity: 99.99%-99.999%. | |
| Gallium(III) Selenide (Ga2Se3) | Gallium(III) Selenide (Ga2Se3). Alternative Names: Gallium(III) Selenide Powder, Ga2Se3 Powder, digallium triselenide; gallium(III) selenide; gallium selenide. Purity: 99.999%. | |
| Gallium(II) Selenide (GaSe) | Gallium(II) Selenide (GaSe). Alternative Names: Gallium(II) Selenide Powder, GaSe Powder, gallium selenide; gallium(II) selenide. Purity: 99.999%. | |
| Gallium Nitrate Nanoparticles | Gallium Nitrate Nanoparticles. CAS No. 69365-72-6. Mole weight: 255.74 273.75. IUPAC Name: gallium; trinitrate; hydrate. SMILES: [N+](=O)([O-])[O-].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-].O.[Ga+3]. InChI: InChI=1S/Ga.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1. | |
| Gallium Nitride (GaN) | Gallium Nitride (GaN). Alternative Names: Gallium Nitride Powder, GaN Powder, Gallium Nitride, GaN, 25617-97-4. Purity: 99.99%, 99.999%, 99.9999%. | |
| Gallium Nitride (GaN) Crystal | Gallium Nitride (GaN) Crystal. Alternative Names: Gallium Nitride Crystal, GaN Crystal, GaN Wafers, GaN Substrate, GaN Slice. | |
| Gallium Nitride (GaN) Sputtering Targets | Gallium Nitride (GaN) Sputtering Targets. Alternative Names: Gallium Nitride (GaN) Sputtering Targets, GaN Sputtering Target, GaN Sputter Target, GaN Target, Gallium Nitride Sputtering Target, Gallium Nitride Sputter Target, Gallium Nitride Target. Purity: 99.99%. | |
| Gallium Nitride Substrate | Gallium Nitride Substrate. Purity: > 99.5 %. | |
| Gallium Nitride Substrates | Gallium Nitride Substrates. CAS No. 25617-97-4. Purity: >99.9%. | |
| Gallium Nitride wafer | Gallium Nitride wafer. CAS No. 25617-97-4. Purity: >99.9%. | |
| Gallium Oxide | Gallium Oxide. CAS No. 12024-21-4. Molecular formula: Ga2O3. Mole weight: 187.444 g/mol. Purity: 99.9%. | |
| Gallium Oxide Doped Zinc Oxide (GZO) Sputtering Targets | Gallium Oxide Doped Zinc Oxide (GZO) Sputtering Targets. Alternative Names: Gallium Oxide Doped Zinc Oxide (GZO) Sputtering Targets, GZO Sputtering Target, GZO Sputter Target, GZO Target, Gallium Oxide Doped Zinc Oxide Sputtering Target, Gallium Oxide Doped Zinc Oxide Sputter Target, Gallium Oxide Doped Zinc Oxide Target. Purity: 99.9%. | |
| Gallium Oxide (Ga2O3) | Gallium Oxide (Ga2O3). Alternative Names: Gallium Oxide Powder, Ga2O3 Powder, digallium trioxide; gallium(III) oxide; gallium oxide. Purity: 99.999%, 99.9999%. | |
| Gallium Oxide (Ga2O3) Sputtering Targets | Gallium Oxide (Ga2O3) Sputtering Targets. Alternative Names: Gallium Oxide (Ga2O3) Sputtering Targets, Ga2O3 Sputtering Targets, Ga2O3 Targets, Ga2O3 Sputter Targets. Purity: 99.99%-99.9999%. | |
| Gallium Oxide Nanoparticle Dispersion | Gallium Oxide Nanoparticle Dispersion. Mole weight: 187.44. IUPAC Name: Digallium oxygen(2-). SMILES: O=[Ga]O[Ga]=O. InChI: InChI=1S/2Ga.3O. | |
| Gallium Oxide Nanoparticles / Nanopowder | Gallium Oxide Nanoparticles / Nanopowder. CAS No. 12024-21-4. Mole weight: 187.44. IUPAC Name: Digallium oxygen(2-). SMILES: O=[Ga]O[Ga]=O. InChI: InChI=1S/2Ga.3O. | |
| Gallium Oxide Nanopowder | Gallium Oxide Nanopowder. CAS No. 12024-21-4. Molecular formula: Ga2O3. Mole weight: 187.44 g/mol. Purity: 99.9%. | |
| Gallium Phosphide (GaP) Semiconductor Crystal | Gallium Phosphide (GaP) Semiconductor Crystal. Alternative Names: GaP Wafers, GaP Substrate, GaP Slice, Gallium Phosphide Wafers, Gallium Phosphide Substrate, Gallium Phosphide Slice. | |
| Gallium Phosphide Nanodispersion | Gallium Phosphide Nanodispersion. CAS No. 12063-98-8. Mole weight: 100.7. IUPAC Name: gallanylidynephosphane. SMILES: [Ga]>P. InChI: InChI=1S/Ga.P. | |
| Gallium Selenide (Ga2Se3) Sputtering Targets | Gallium Selenide (Ga2Se3) Sputtering Targets. Alternative Names: Gallium Selenide (Ga2Se3) Sputtering Targets, Ga2Se3 Sputtering Target, Ga2Se3 Sputter Target, Ga2Se3 Target, Gallium Selenide Sputtering Target, Gallium Selenide Sputter Target, Gallium Selenide Target. Purity: 99.999%. | |
| Gallium Sulfide (GaS) | Gallium Sulfide (GaS). Alternative Names: Gallium Sulfide Powder, GaS Powder, gallium sulphide; gallium(II) sulphide; gallium sulfide; gallium(II) sulfide. Purity: 99.999%. | |
| Gallium Sulfide (GaS) Sputtering Targets | Gallium Sulfide (GaS) Sputtering Targets. Alternative Names: Gallium Sulfide (GaS) Sputtering Targets, GaS Sputtering Targets, GaS Targets, GaS Sputter Targets. Purity: 99.999%. | |
| Gallium Telluride (Ga2Te3) | Gallium Telluride (Ga2Te3). Alternative Names: Gallium Telluride Powder, Ga2Te3 Powder, Gallium Telluride, Ga2Te3, 12024-27-0. Purity: 99.99%, 99.999%, 99.9999%. | |
| Gallium Telluride (Ga2Te3) Sputtering Targets | Gallium Telluride (Ga2Te3) Sputtering Targets. Alternative Names: Gallium Telluride (Ga2Te3) Sputtering Targets, Ga2Te3 Sputtering Target, Ga2Te3 Sputter Target, Ga2Te3 Target, Gallium Telluride Sputtering Target, Gallium Telluride Sputter Target, Gallium Telluride Target. Purity: 99.9%-99.999%. | |
| Gallium Telluride (GaTe) | Gallium Telluride (GaTe). Alternative Names: Gallium Telluride Powder, GaTe Powder, gallium telluride; gallium(II) telluride. Purity: 99.999%. | |
| gamma, 10-15 nm | gamma, 10-15 nm. Purity: 99.99%. | |
| Gamma Aluminum Oxide | Gamma Aluminum Oxide. | |
| Gamma Aluminum Oxide nano powder | Gamma Aluminum Oxide nano powder. Purity: 99.99%. | |
| Gamma aluminum oxide spherical nanoparticles | Gamma aluminum oxide spherical nanoparticles. Purity: >99,9%. | |
| Gamma Iron (III) | Gamma Iron (III). Purity: 99.9%. | |
| Gamma Oryzanol Powder | Gamma Oryzanol Powder. CAS No. 11042-64-1. Molecular formula: C40H58O4. Mole weight: C40H58O4. Purity: 99.9 %. | |
| GaN Substrate | GaN Substrate. CAS No. 25617-97-4. Purity: >99.9%. | |
| GaN Wafer | GaN Wafer. CAS No. 25617-97-4. Purity: >99.9%. | |
| Gd2O3 nanopowder | Gd2O3 nanopowder. Purity: 99.9% (REO). | |
| Gelatin Nanoparticles | Gelatin Nanoparticles. CAS No. 9000-70-8. Mole weight: 256.24 g/mol. Purity: 99%. | |
| Gelatin Nanopowder | Gelatin Nanopowder. CAS No. 9000-70-8. Mole weight: 256.24 g/mol. Purity: 99%. | |
| Germanium Arsenide (GaAs) Semiconductor Crystal | Germanium Arsenide (GaAs) Semiconductor Crystal. Alternative Names: GaAs Wafers, GaAs Substrate, GaAs Slice, Germanium Arsenide Wafers, Germanium Arsenide Substrate, Germanium Arsenide Slice. | |
| Germanium Disulfide (GeS2) | Germanium Disulfide (GeS2). Alternative Names: Germanium Disulfide Powder, GeS2 Powder, germanium disulphide; germanium(IV) sulphide; germanium disulfide; germanium sulfide; germanium sulphide; germanium(IV) sulfide. Purity: 99.999%. | |
| Germanium Disulfide (GeS2) Sputtering Targets | Germanium Disulfide (GeS2) Sputtering Targets. Alternative Names: Germanium Disulfide (GeS2) Sputtering Targets, GeS2 Sputtering Target, GeS2 Sputter Target, GeS2 Target, Germanium Disulfide Sputtering Target, Germanium Disulfide Sputter Target, Germanium Disulfide Target. Purity: 99.99%-99.999%. | |
| Germanium (Ge) | Germanium (Ge). Alternative Names: High Purity Germanium (Ge); 99.99% Germanium (Ge); 99.999% Germanium (Ge); 99.9999% Germanium (Ge). Purity: 4N-6N. | |
| Germanium (Ge) Infrared Crystal | Germanium (Ge) Infrared Crystal. Alternative Names: Ge Wafers, Ge Substrate, Ge Slice, Germanium Wafers, Germanium Substrate, Germanium Slice. | |
| Germanium (Ge) Semiconductor Crystal | Germanium (Ge) Semiconductor Crystal. Alternative Names: Ge Wafers, Ge Substrate, Ge Slice, Germanium Wafers, Germanium Substrate, Germanium Slice. | |
| Germanium (Ge) Sputtering Targets | Germanium (Ge) Sputtering Targets. Alternative Names: Germanium (Ge) Sputtering Targets, Ge Sputtering Target, Ge Sputter Target, Ge Target, Germanium Sputtering Target, Germanium Sputter Target, Germanium Target. Purity: 99.999%. | |
| Germanium(II) Iodide (GeI2) | Germanium(II) Iodide (GeI2). Alternative Names: Germanium(II) Iodide Powder, GeI2 Powder, Germanium(II) Iodide, GeI2, 13573-08-5. Purity: 99.99%, 99.999%. | |
| Germanium(IV) oxide | Germanium(IV) oxide. Alternative Names: Germanium dioxide,GeO2. CAS No. 1310-53-8. Purity: 3N-4N. | |
| Germanium(IV) Selenide (GeSe2) | Germanium(IV) Selenide (GeSe2). Alternative Names: Germanium(IV) Selenide Powder, GeSe2 Powder, Germanium(IV) Selenide, GeSe2, 12065-11-1. Purity: 99.99%, 99.999%. | |
| Germanium Nanoparticle Dispersion | Germanium Nanoparticle Dispersion. Mole weight: 72.61. SMILES: [Ge]. InChI: InChI=1S/Ge. | |
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